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PDTC143EQA fiches techniques PDF

NXP Semiconductors - NPN resistor-equipped transistors

Numéro de référence PDTC143EQA
Description NPN resistor-equipped transistors
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PDTC143EQA fiche technique
PDTC143/114/124/144EQA
series
50 V, 100 mA NPN resistor-equipped transistors
Rev. 1 — 30 October 2015
Product data sheet
1. Product profile
1.1 General description
100 mA NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
and solderable side pads.
Table 1. Product overview
Type number
R1
PDTC143EQA
4.7 k
PDTC114EQA
10 k
PDTC124EQA
22 k
PDTC144EQA
47 k
R2
4.7 k
10 k
22 k
47 k
Package NXP PNP complement
DFN1010D-3 PDTA143EQA
(SOT1215) PDTA114EQA
PDTA124EQA
PDTA144EQA
1.2 Features and benefits
100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduced pick and place costs
Low package height of 0.37 mm
AEC-Q101 qualified
Suitable for Automatic Optical
Inspection (AOI) of solder joint
1.3 Applications
Digital applications
Cost saving alternative for
BC847/BC857 series in digital
applications
Controlling IC inputs
Switching loads
1.4 Quick reference data
Table 2.
Symbol
VCEO
IO
Quick reference data
Parameter
collector-emitter voltage
output current
Conditions
open base
Min Typ Max Unit
- - 50 V
- - 100 mA

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