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PDF BAV70W Data sheet ( Hoja de datos )

Número de pieza BAV70W
Descripción SILICON EPITAXIAL PLANAR SWITCHING DIODE
Fabricantes SEMTECH　
Logotipo SEMTECH Logotipo



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No Preview Available ! BAV70W Hoja de datos, Descripción, Manual

BAV70W
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Features
• Fast switching diode
• Ultra small surface mount package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Non-Repetitive Peak Reverse Voltage
Reverse Voltage
Continuous Forward Current
Single diode loaded
Double diode loaded
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current
at t = 1 µs
at t = 1 ms
at t = 1 s
Power Dissipation
Junction Temperature
Storage Temperature Range
3
12
Symbol
VRM
VR
IF
IFRM
IFSM
Ptot
TJ
Ts
Marking Code: A4
Value
100
75
175
100
500
4
1
0.5
200
150
- 65 to + 150
Unit
V
V
mA
mA
A
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Reverse Breakdown Voltage
at IR = 100 µA
Forward Voltage
at IF = 1 mA
at IF = 10 mA
at IF = 50 mA
at IF = 150 mA
Reverse Leakage Current
at VR = 25 V
at VR = 75 V
at VR = 25 V, TJ = 150 OC
at VR = 75 V, TJ = 150 OC
Diode Capacitance
at VR = 0 V, f = 1 MHz
Reverse Recovery Time
at IF = 10 mA to IR = 10 mA, Irr = 0.1 IR, RL = 100 Ω
Symbol
VBR(R)
VF
IR
Ctot
trr
Min.
75
-
-
-
-
-
-
-
-
-
-
Max.
-
0.715
0.855
1
1.25
30
2.5
60
100
2
4
Unit
V
V
nA
µA
µA
µA
pF
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/05/2007

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