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PDF QID4515002 Data sheet ( Hoja de datos )
| Número de pieza | QID4515002 | |
| Descripción | HVIGBT Module | |
| Fabricantes | Powerex | |
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QID4515002
Dual IGBTMOD™
HVIGBT Module
150 Amperes/4500 Volts
S NUTS
(3TYP)
A
D
FF
J (2TYP)
C
BE
1 23
H
M
H
G (3TYP)
T (SCREWING
DEPTH)
R (DEEP)
K
(3TYP)
L
(2TYP)
V (4TYP)
U (5TYP)
P
Q
N
41
5
6
2
8
73
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A
5.51 140.0
B
2.87
73.0
C
1.89
48.0
D 4.88±0.01 124.0±0.25
E 2.24±0.01 57.0±0.25
F
1.18
30.0
G
0.43
11.0
H
1.07
27.15
J
0.20
5.0
K
1.65
42.0
Dimensions Inches Millimeters
L 0.69±0.01 17.5±0.25
M
0.38
9.75
N
0.20
5.0
P
0.22
5.5
Q
1.44
36.5
R
0.16
4.0
S
M6 Metric
M6
T
0.63 Min. 16.0 Min.
U
0.11 x 0.02 2.8 x 0.5
V
0.28 Dia.
7.0 Dia.
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
Low VCE(sat)
Creepage and Clearance
meet IEC 60077-1
High Isolation Voltage
Rugged SWSOA and RRSOA
Compact Industry Standard
Package
Applications:
Traction
Medium Voltage Drives
High Voltage Power Supplies
09/12 Rev. 9
1
1 page  
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID4515002
Dual IGBTMOD™ HVIGBT Module
150 Amperes/4500 Volts
HALF-BRIDGE
SWITCHING TIME
CHARACTERISTICS (TYPICAL)
102
VCC = 2800V
VGE = ±15V
RG(on) = 24.3Ω
101 RG(off) = 90Ω
td(off)
100 td(on)
tf
10-1
10-2
11.0
tr
Ls = 150nH
Tj = 125°C
Inductive Load
110 1110
COLLECTOR CURRENT, IC, (AMPERES)
1500
SHORT CIRCUIT SAFE
OPERATING AREA (SCSOA)
1250
1000
750
500
250
VCC ≤ 3300V
VGE = ±15V
RG(on) = 24.3Ω
RG(off) = 90Ω
Tj = 125°C
0
0 1000 2000
3000
4000
5000
COLLECTOR EMITTER VOLTAGE, VCES, (VOLTS)
FREE-WHEEL DIODE
REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
102 VCC = 2800V
VGE = ±15V
RG(on) = 24.3Ω
Ls = 100 nH
101
Irr
1100.0
110.0
100 trr 11.0
10-1
11.0
375
312
250
Tj = 125°C
Inductive Load
1.1
110 1110
EMITTER CURRENT, IC, (AMPERES)
FREE-WHEEL DIODE
REVERSE RECOVERY SAFE
OPERATING AREA (RRSOA)
VCC ≤ 3200V
di/dt < 660A/µs
Tj = 125°C
188
125
63
0
0 1000 2000 3000 4000 5000
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE BIAS SAFE
OPERATING AREA (RBSOA)
375
312
250
188
125
63
VCC ≤ 3200V
VGE = ±15V
RG(off) = 90Ω
Tj = 125°C
0
0 1000 2000 3000 4000 5000
COLLECTOR EMITTER VOLTAGE, VCES, (VOLTS)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
1.2
Single Pulse
1.0
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.8 0.083K/W
(IGBT)
0.6
Rth(j-c) =
0.157K/W
(FWDi)
0.4
0.2
0
10-3
10-2
10-1
TIME, (s)
100
101
09/12 Rev. 9
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet QID4515002.PDF ] | |
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