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CHM630PAPT Datasheet دیتاشیت PDF دانلود

دیتاشیت - Chenmko Enterprise - N-Channel Enhancement Mode Field Effect Transistor

شماره قطعه CHM630PAPT
شرح مفصل N-Channel Enhancement Mode Field Effect Transistor
تولید کننده Chenmko Enterprise 
آرم Chenmko Enterprise 


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CHM630PAPT شرح
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
CHM630PAPT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 200 Volts CURRENT 7.8 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
FEATURE
* Small package. (TO-252A)
* Super high dense cell design for extremely low RDS(ON).
* High power and current handing capability.
CONSTRUCTION
* N-Channel Enhancement
.280 (7.10)
.238 (6.05)
.220 (5.59)
.195 (4.95)
(1) (3) (2)
TO-252A
.094 (2.40)
.087 (2.20)
.035 (0.89)
.018 (0.45)
CIRCUIT
D (3)
(1) G
S (2)
Absolute Maximum Ratings
Symbol Parameter
VDSS
Drain-Source Voltage
TA = 25°C unless otherwise noted
VGSS
Gate-Source Voltage
Maximum Drain Current - Continuous
ID
- Pulsed (Note 3)
PD Maximum Power Dissipation at Tc = 25 °C
TJ Operating Temperature Range
TSTG Storage Temperature Range
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
.035 (0.90)
.025 (0.64)
.102 (2.59)
.078 (1.98)
1 Gate
2 Source
3 Drain( Heat Sink )
.024 (0.61)
.016 (0.40)
Dimensions in inches and (millimeters)
TO-252A
CHM630PAPT
200
±20
7.8
31.2
50
-55 to 150
-55 to 150
Units
V
V
A
W
°C
°C
50 °C/W
2006-02

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