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PDF 5SNA1500E330300 Data sheet ( Hoja de datos )
| Número de pieza | 5SNA1500E330300 | |
| Descripción | IGBT Module | |
| Fabricantes | ABB | |
| Logotipo |  |
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VCE =
IC =
3300 V
1500 A
ABB HiPakTM
IGBT Module
5SNA 1500E330300
• Ultra low-loss, rugged SPT+ chip-set
• Smooth switching SPT+ chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Doc. No. 5SYA 1595-00 July 07
Maximum rated values 1)
Parameter
Symbol Conditions
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
Total power dissipation
DC forward current
Peak forward current
Surge current
IGBT short circuit SOA
Isolation voltage
Junction temperature
Junction operating temperature
Case temperature
Storage temperature
Mounting torques 2)
VCES
IC
ICM
VGES
Ptot
IF
IFRM
IFSM
tpsc
Visol
Tvj
Tvj(op)
Tc
Tstg
Ms
Mt1
Mt2
VGE = 0 V
Tc = 85 °C
tp = 1 ms, Tc = 85 °C
Tc = 25 °C, per switch (IGBT)
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
VCC = 2500 V, VCEMCHIP ≤ 3300 V
VGE ≤ 15 V, Tvj ≤ 125 °C
1 min, f = 50 Hz
Base-heatsink, M6 screws
Main terminals, M8 screws
Auxiliary terminals, M4 screws
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
min max Unit
3300 V
1500 A
3000 A
-20 20 V
11750 W
1500 A
3000 A
14000 A
10 µs
6000 V
150 °C
-40 125 °C
-40 125 °C
-40 125 °C
46
8 10 Nm
23
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
1 page  
5SNA 1500E330300
3000
2500
2000
1500
25 °C
125 °C
1000
500
VGE = 15V
0
012345
VCE [V]
3000
VCE = 20 V
2500
2000
1500
1000
500
125 °C
25 °C
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
VGE [V]
Fig. 1 Typical on-state characteristics, chip level
Fig. 2 Typical transfer characteristics, chip level
3000
2500
2000
19 V
17 V
15 V
13 V
1500
1000
11 V
500
9V
0
01
23
VCEsat [V]
Tvj = 25 °C
45
3000
2500
2000
1500
19 V
17 V
15 V
13 V
11 V
1000
500
0
0
9V
Tvj = 125 °C
123456
VCEsat [V]
Fig. 3 Typical output characteristics, chip level
Fig. 4 Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1595-00 July 07
page 5 of 9
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| PDF Descargar | [ Datasheet 5SNA1500E330300.PDF ] | |
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