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PDF 5SNA1600N170100 Data sheet ( Hoja de datos )
| Número de pieza | 5SNA1600N170100 | |
| Descripción | IGBT Module | |
| Fabricantes | ABB | |
| Logotipo |  |
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VCE =
IC =
1700 V
1600 A
ABB HiPakTM
IGBT Module
5SNA 1600N170100
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Doc. No. 5SYA1564-01 Oct 06
Maximum rated values 1)
Parameter
Symbol Conditions
min max Unit
Collector-emitter voltage
VCES VGE = 0 V, Tvj ≥ 25 °C
1700 V
DC collector current
IC Tc = 80 °C
1600 A
Peak collector current
ICM tp = 1 ms, Tc = 80 °C
3200 A
Gate-emitter voltage
VGES
-20 20 V
Total power dissipation
Ptot Tc = 25 °C, per switch (IGBT)
9100 W
DC forward current
IF
1600 A
Peak forward current
Surge current
IGBT short circuit SOA
IFRM
IFSM
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
tpsc
VCC = 1200 V, VCEMCHIP ≤ 1700 V
VGE ≤ 15 V, Tvj ≤ 125 °C
3200 A
13200 A
10 µs
Isolation voltage
Visol 1 min, f = 50 Hz
4000 V
Junction temperature
Tvj
150 °C
Junction operating temperature Tvj(op)
-40 125 °C
Case temperature
Tc
-40 125 °C
Storage temperature
Tstg
-40 125 °C
Mounting torques 2)
Ms Base-heatsink, M6 screws
Mt1 Main terminals, M8 screws
46
8 10 Nm
Mt2 Auxiliary terminals, M4 screws
23
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
1 page  
5SNA 1600N170100
3200
2800
2400
25 °C
125 °C
2000
1600
1200
800
400
VGE = 15 V
0
012345
VCE [V]
3200
2800
VCE = 25 V
2400
2000
1600
1200
800
400
125 °C
25 °C
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
VGE [V]
Fig. 1 Typical on-state characteristics, chip level
Fig. 2 Typical transfer characteristics, chip level
3200
2800
2400
2000
1600
17V
15V
13V
11V
9V
1200
800
400
0
01
Tvj = 25 °C
23456
VCE [V]
3200
2800
2400
2000
17V
15V
13V
11V
9V
1600
1200
800
400
0
01
Tvj = 125 °C
23456
VCE [V]
Fig. 3 Typical output characteristics, chip level
Fig. 4 Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06
page 5 of 9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 5SNA1600N170100.PDF ] | |
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