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PDF 5SNA1200G330100 Data sheet ( Hoja de datos )
| Número de pieza | 5SNA1200G330100 | |
| Descripción | IGBT Module | |
| Fabricantes | ABB | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 5SNA1200G330100 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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VCE =
IC =
3300 V
1200 A
ABB HiPakTM
IGBT Module
5SNA 1200G330100
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• High insulation package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Doc. No. 5SYA1563-00 Apr.06
Maximum rated values 1)
Parameter
Symbol Conditions
min max Unit
Collector-emitter voltage
VCES VGE = 0 V
DC collector current
IC Tc = 80 °C
Peak collector current
ICM tp = 1 ms, Tc = 80 °C
Gate-emitter voltage
VGES
-20
Total power dissipation
Ptot Tc = 25 °C, per switch (IGBT)
DC forward current
IF
Peak forward current
Surge current
IGBT short circuit SOA
IFRM
IFSM
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
tpsc
VCC = 2500 V, VCEMCHIP ≤ 3300 V
VGE ≤ 15 V, Tvj ≤ 125 °C
Isolation voltage
Visol 1 min, f = 50 Hz
Junction temperature
Tvj
Junction operating temperature Tvj(op)
-40
Case temperature
Tc
-40
Storage temperature
Tstg
-40
Ms Base-heatsink, M6 screws
4
Mounting torques 2)
Mt1 Main terminals, M8 screws
8
Mt2 Auxiliary terminals, M4 screws
2
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
3300
1200
2400
20
11750
1200
2400
V
A
A
V
W
A
A
14000 A
10 µs
10200 V
125 °C
125 °C
125 °C
125 °C
6
10 Nm
3
1 page  
5SNA 1200G330100
2400
2000
1600
1200
25 °C
125 °C
2400
VCE = 20V
2000
1600
1200
800
400
VGE = 15 V
0
0123456
VCE [V]
800
125°C
400 25°C
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
VGE [V]
Fig. 1 Typical on-state characteristics, chip level
Fig. 2 Typical transfer characteristics, chip level
2400
Tvj = 25 °C
2000
1600
1200
17 V
15 V
13 V
11 V
2400
2000
1600
1200
17 V
15 V
13 V
11 V
800
9V
400
0
012345
VCE [V]
800
400
0
0
9V
12
34
VCE [V]
Tvj = 125 °C
567
Fig. 3 Typical output characteristics, chip level
Fig. 4 Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1563-00 Apr.06
page 5 of 9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 5SNA1200G330100.PDF ] | |
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