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PDF 5SNA0600G650100 Data sheet ( Hoja de datos )
| Número de pieza | 5SNA0600G650100 | |
| Descripción | IGBT Module | |
| Fabricantes | ABB | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 5SNA0600G650100 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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VCE =
IC =
6500 V
600 A
ABB HiPakTM
IGBT Module
5SNA 0600G650100
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• High insulation package
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Doc. No. 5SYA1558-02 Jan 06
Maximum rated values 1)
Parameter
Symbol Conditions
min max Unit
Collector-emitter voltage
VCES VGE = 0 V, Tvj ≥ 25 °C
DC collector current
IC Tc = 85 °C
Peak collector current
ICM tp = 1 ms, Tc = 85 °C
Gate-emitter voltage
VGES
-20
Total power dissipation
Ptot Tc = 25 °C, per switch (IGBT)
DC forward current
IF
Peak forward current
Surge current
IGBT short circuit SOA
IFRM
IFSM
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
tpsc
VCC = 4400 V, VCEMCHIP ≤ 6500 V
VGE ≤ 15 V, Tvj ≤ 125 °C
Isolation voltage
Visol 1 min, f = 50 Hz
Junction temperature
Tvj
Junction operating temperature Tvj(op)
-40
Case temperature
Tc
-40
Storage temperature
Tstg
-40
Ms Base-heatsink, M6 screws
4
Mounting torques 2)
Mt1 Main terminals, M8 screws
8
Mt2 Auxiliary terminals, M4 screws
2
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
6500
600
1200
20
11900
600
1200
V
A
A
V
W
A
A
6000 A
10 µs
10200 V
125 °C
125 °C
125 °C
125 °C
6
10 Nm
3
1 page  
5SNA 0600G650100
1200
1000
800
600
25 °C
125 °C
1200
VCE = 20 V
1000
800
600
400
200
VGE = 15V
0
012345678
VCE [V]
400
25 °C
125 °C
200
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
VGE [V]
Fig. 1 Typical on-state characteristics, chip level
Fig. 2 Typical transfer characteristics, chip level
1200
1000
800
600
400
17V
15V
13V
11V
200
0
0
9V
12
345
VCE [V]
Tvj = 25 °C
678
1200
1000
800
600
17V
15V
13V
11V
400
9V
200
Tvj = 125 °C
0
0 1 2 3 4 5 6 7 8 9 10
VCE [V]
Fig. 3 Typical output characteristics, chip level
Fig. 4 Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1558-02 Jan 06
page 5 of 9
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 5SNA0600G650100.PDF ] | |
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