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SemiHow - N-Channel MOSFET

Numéro de référence HFW50N06A
Description N-Channel MOSFET
Fabricant SemiHow 
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HFW50N06A fiche technique
Oct 2015
HFW50N06A
60V N-Channel MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 27 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : ȍ(Typ.) @VGS=10V
‰ 100% Avalanche Tested
BVDSS = 60 V
RDS(on) typ = 18
ID = 50 A
D2-PAK
2
1
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TA = 25) *
Power Dissipation (TC = 25)
- Derate above 25
60
50
35.4
200
ρ25
490
50
12
3.75
120
0.8
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +175
300
Units
V
A
A
A
V
mJ
A
mJ
W
W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
RșJA
Junction-to-Case
Junction-to-Ambient *
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.24
40
62.5
Units
/W
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