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SemiHow - N-Channel MOSFET

Numéro de référence HFS5N60F
Description N-Channel MOSFET
Fabricant SemiHow 
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HFS5N60F fiche technique
Nov 2015
HFS5N60F
600V N-Channel MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 12.5 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 1.8 ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
BVDSS = 600 V
RDS(on) typ ȍ
ID = 5 A
TO-220F
12
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25)
- Derate above 25
600
5.0 *
3.2 *
20 *
ρ30
110
5
4.2
42
0.34
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
* Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
A
mJ
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.0
62.5
Units
/W
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