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SemiHow - N-Channel MOSFET

Numéro de référence HFS4N65F
Description N-Channel MOSFET
Fabricant SemiHow 
Logo SemiHow 





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HFS4N65F fiche technique
July 2015
HFS4N65F
650V N-Channel MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 8.5 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 3.0 ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
BVDSS = 650 V
RDS(on) typ ȍ
ID = 4 A
TO-220F
12
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25)
- Derate above 25
650
4.0 *
2.5 *
16 *
ρ30
70
4.0
3.5
35
0.28
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
* Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
A
mJ
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.6
62.5
Units
/W
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