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Numéro de référence | HFP5N60F | ||
Description | 600V N-Channel MOSFET | ||
Fabricant | SemiHow | ||
Logo | |||
Nov 2015
HFP5N60F
600V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 12.5 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 1.8 ȍ7\S#9GS=10V
100% Avalanche Tested
BVDSS = 600 V
RDS(on) typ ȍ
ID = 5 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25)
- Derate above 25
600
5.0
3.2
20
ρ30
110
5
12.5
125
1.0
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.0
--
62.5
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͦ͑͢͡
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Pages | Pages 7 | ||
Télécharger | [ HFP5N60F ] |
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