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Inchange Semiconductor - Silicon PNP Power Transistor

Numéro de référence BD954
Description Silicon PNP Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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BD954 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD954
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·DC Current Gain-
: hFE= 40(Min)@ IC= -500mA
·Complement to Type BD953
APPLICATIONS
·Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-5 A
ICM Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-8
40
150
-65~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
3.12 /W
Thermal Resistance,Junction to Ambient 70 /W
isc websitewww.iscsemi.cn
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