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Numéro de référence | BD954 | ||
Description | Silicon PNP Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD954
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·DC Current Gain-
: hFE= 40(Min)@ IC= -500mA
·Complement to Type BD953
APPLICATIONS
·Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-5 A
ICM Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-8
40
150
-65~150
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
3.12 ℃/W
Thermal Resistance,Junction to Ambient 70 ℃/W
isc website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ BD954 ] |
No | Description détaillée | Fabricant |
BD950 | Silicon PNP Power Transistor | Inchange Semiconductor |
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