|
|
Numéro de référence | 3DD7F | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD7F
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 3.75A
APPLICATIONS
·Designed for power amplifier, low speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400 V
VCEO
Collector-Emitter Voltage
300 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
Collector Power Dissipation
PC @ TC=75℃
TJ Junction Temperature
Tstg Storage Temperature Range
7.5 A
75 W
175 ℃
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.33 ℃/W
isc website:www.iscsemi.cn
1
|
|||
Pages | Pages 2 | ||
Télécharger | [ 3DD7F ] |
No | Description détaillée | Fabricant |
3DD741A8 | Silicon NPN Transistor | Huajing Microelectronics |
3DD742A8 | Silicon NPN Transistor | Huajing Microelectronics |
3DD7A | Silicon NPN Power Transistor | Inchange Semiconductor |
3DD7B | Silicon NPN Power Transistor | Inchange Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |