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Toshiba Semiconductor - NPN Transistor - 2SC6040

Numéro de référence C6040
Description NPN Transistor - 2SC6040
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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C6040 fiche technique
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6040
High-Speed and High-Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
2SC6040
Unit: mm
High-speed switching: tf = 0.2 µs (max) (IC = 0.3 A)
High breakdown voltage: VCES = 800 V, VCEO = 410 V
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
800
800
410
8
1.0
2.0
0.5
1.0
150
55 to 150
Unit
V
V
V
V
A
A
W
°C
°C
1. Base
2. Collector
3. Emitter
JEDEC
JEITA
TOSHIBA
Weight:
2-7D101A
0.2 g (typ.)
1 2004-12-01

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