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2SB561 fiches techniques PDF

LZG - SILICON PNP TRANSISTOR

Numéro de référence 2SB561
Description SILICON PNP TRANSISTOR
Fabricant LZG 
Logo LZG 





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2SB561 fiche technique
2SB561(3CG561)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于低频功率放大。
Purpose: Low frequency power amplifier.
特征:与 2SD467(3DG467)互补。
Features: Complementary pair with 2SD467(3DG467).
极限参数/Absolute Maximum Ratings(Ta=25℃)
参数符号
数值 单位
Symbol
Rating
Unit
VCBO -25 V
VCEO -20 V
VEBO
-5.0
V
IC
-0.7
A
ICM
-1.0
A
PC 0.5 W
Tj 150 ℃
Tstg -55~150 ℃
电性能参数/Electrical Characteristics(Ta=25℃)
参数符号
Symbol
测试条件
Test Condition
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Cob
IC=-10μA
IC=-1.0mA
IE=-10μA
VCB=-20V
VEB=-4V
VCE=-1.0V
IC=-0.5A
VCE=-1.0V
VCE=-1.0V
VCB=-10V IE=0
IE=0
IB=0
IC=0
IE=0
IC=0
IC=-0.15A
IB=-0.05A
IC=-0.15A
IC=-0.15A
f=1.0MHz
最小值
Min
-25
-20
-5.0
85
数值
Rating
典型值
Typ
-0.2
-0.75
350
20
最大值
Max
-1.0
-1.0
240
-0.5
-1.0
单位
Unit
V
V
V
μA
μA
V
V
MHz
pF
hFE 分档/hFE Classifications: B:85~170 C:120~240
http://www.lzg.so

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