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PDF 2SB561 Data sheet ( Hoja de datos )
| Número de pieza | 2SB561 | |
| Descripción | PNP Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
2SB561
-0.7A , -25V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low Frequency Power Amplifier
CLASSIFICATION OF hFE
Product-Rank 2SB561-B
Range
85~170
2SB561-C
120~240
TO-92
GH
J
AD
B
K
E CF
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Base
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
-25
-20
-5
-0.7
0.5
250
150, -55~150
Collector
Emitter
Unit
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Collector Output Capacitance
Transition Frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE*
VCE(sat)
VBE
Ccb
fT
-25 - - V
-20 - - V
-5 - - V
- - -1 μA
- - -1 μA
85 - 240
- - -0.5 V
- - -1 V
- 20 - pF
- 350 - MHz
Test condition
IC= -0.01mA, IE=0
IC= -1mA, IB=0
IE= -0.01mA, IC=0
VCB= -20V, IE=0
VEB= -5V, IC=0
VCE= -1V, IC= -0.15A
IC= -0.5A, IB= -0.05A
VCE= -1V, IC= -0.15A
VCB = -10V, IE=0, f=1MHz
VCE = -1V, IC = -0.15A
http://www.SeCoSGmbH.com/
14-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
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