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GA01PNS150-CAU fiches techniques PDF

GeneSiC - Silicon Carbide PiN Diode Chip

Numéro de référence GA01PNS150-CAU
Description Silicon Carbide PiN Diode Chip
Fabricant GeneSiC 
Logo GeneSiC 





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GA01PNS150-CAU fiche technique
Silicon Carbide
PiN Diode Chip
 
Die Datasheet
GA01PNS150-CAU
VRRM
IF @ 25 oC
= 15000 V
= 1A
Features
15 kV blocking
210 °C operating temperature
Fast turn off characteristics
Soft reverse recovery characteristics
Ultra-Fast high temperature switching
Advantages
Highest voltage rectifier commercially available
Reduced stacking
Reduced system complexity/Increased reliability
Die Size = 2.4 mm x 2.4 mm
Applications
Voltage Multiplier
Ignition/Trigger Circuits
Oil/Downhole
Lighting
Defense
Maximum Ratings at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Operating and storage temperature
VRRM
IF
IF(RMS)
Tj , Tstg
Conditions
Values
15
1
0.5
-55 to 210
Electrical Characteristics at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total reverse recovery charge
Switching time
Total capacitance
Total capacitive charge
VF
IF = 1 A, Tj = 25 °C
IF = 1 A, Tj = 210 °C
IR
VR = 15 kV, Tj = 25 °C
VR = 15 kV, Tj = 210 °C
Qrr
ts
IF ≤ IF,MAX
dIF/dt = 70 A/μs
Tj = 210 °C
VR = 1000 V
IF = 1.5 A
VR = 1000 V
IF = 1.5 A
VR = 1 V, f = 1 MHz, Tj = 25 °C
C VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
QC VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
6.4
4.3
1
558
< 236
22
4
3
4.5
max.
20
100
 
 
 
 
Unit
kV
A
A
°C
Unit
V
µA
nC
ns
pF
nC
Apr 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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