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IRF6216PBF-1 fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF6216PBF-1
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF6216PBF-1 fiche technique
VDS
RDS(on) max
(@VGS = -10V)
Qg (typical)
ID
(@TA = 25°C)
-150
0.24
33
-2.2
V
Ω
nC
A
IRF6216PbF-1
HEXFET® Power MOSFET
S1
S2
S3
G4
8
A
D
7D
6D
5D
Top View
SO-8
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF6216PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF6216PbF-1
IRF6216TRPbF-1
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
-2.2
-1.9
-19
2.5
0.02
± 20
7.8
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Notes  through „ are on page 8
1 www.irf.com © 2014 International Rectifier
Typ.
–––
–––
Submit Datasheet Feedback
Max.
20
50
Units
°C/W
June 30, 2014

PagesPages 8
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