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IRF5801PBF-1 fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF5801PBF-1
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF5801PBF-1 fiche technique
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TA = 25°C)
200
2.20
3.9
0.6
V
Ω
nC
A
Features
Industry-standard pinout TSOP-6 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
IRF5801PbF-1
HEXFET® Power MOSFET
D1
D2
G3
6D
5D
4S
TSOP-6
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF5801TRPbF-1
Package Type
TSOP-6
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRF5801TRPbF-1
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Symbol
RθJA
Parameter
Junction-to-Ambient „
Notes  through † are on page 8
Max.
0.6
0.48
4.8
2.0
0.016
± 30
9.6
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
Max.
62.5
Units
°C/W
1 www.irf.com © 2014 International Rectifier
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July 15, 2014

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