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2SC5949 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Transistor

Numéro de référence 2SC5949
Description Silicon NPN Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC5949 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5949
DESCRIPTION
·High Current Capability
·High Power Dissipation
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)
·Complement to Type 2SA2121
APPLICATIONS
·Power amplifier applications
·Recommended for audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
200 V
VCEO
Collector-Emitter Voltage
200 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
15 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
1.5 A
220 W
150
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark

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