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2SC5089 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Transistor

Numéro de référence 2SC5089
Description Silicon NPN Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC5089 fiche technique
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5089
DESCRIPTION
·High Gain Bandwidth Product
fT = 10 GHz TYP.
·High Gain, Low Noise Figure
S21e2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz
APPLICATIONS
·Designed for VHF~UHF band low noise amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
10 V
VEBO
Emitter-Base Voltage
1.5 V
IC Collector Current-Continuous
40 mA
IB Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
20 mA
0.15 W
125
Tstg Storage Temperature Range
-55~125
isc websitewww.iscsemi.cn
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