|
|
Numéro de référence | 2SC5089 | ||
Description | Silicon NPN Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5089
DESCRIPTION
·High Gain Bandwidth Product
fT = 10 GHz TYP.
·High Gain, Low Noise Figure
︱S21e︱2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz
APPLICATIONS
·Designed for VHF~UHF band low noise amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
10 V
VEBO
Emitter-Base Voltage
1.5 V
IC Collector Current-Continuous
40 mA
IB Base Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
20 mA
0.15 W
125 ℃
Tstg Storage Temperature Range
-55~125
℃
isc website:www.iscsemi.cn
1
|
|||
Pages | Pages 7 | ||
Télécharger | [ 2SC5089 ] |
No | Description détaillée | Fabricant |
2SC508 | SILICON POWER TRANSISTOR | SavantIC |
2SC5080 | Silicon NPN Epitaxial | Hitachi Semiconductor |
2SC5081 | Silicon NPN Epitaxial | Hitachi Semiconductor |
2SC5084 | Silicon NPN Epitaxial Planar Type Transistor | Toshiba Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |