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PDF 2SC5064 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5064 | |
| Descripción | Silicon NPN Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5064
DESCRIPTION
·Low Noise and High Gain
NF = 1.1 dB TYP., ︱S21e︱2= 12 dB TYP.
@VCE = 5 V, f = 1.0 GHz
APPLICATIONS
·Designed for VHF~UHF band low noise amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
12 V
VEBO
Emitter-Base Voltage
3.0 V
IC Collector Current-Continuous
30 mA
IB Base Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
15 mA
0.15 W
125 ℃
Tstg Storage Temperature Range
-55~125
℃
isc website：www.iscsemi.cn
1
1 page  
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
VCE = 5 V, IC = 10 mA, ZO = 50Ω
Freque.
S11
MHz
MAG.
ANG.
200
0.591
-58.0
400
0.367
-90.3
600
0.260
-110.7
800
0.209
-126.9
1000
0.178
-141.8
1200
0.160
-153.7
1400
0.150
-166.3
1600
0.141
-175.2
1800
0.130
178.2
2000
0.133
174.0
S21
MAG.
ANG.
14.955
129.6
9.581
107.5
6.781
96.1
5.207
88.6
4.269
82.5
3.618
77.7
3.152
72.7
2.801
68.7
2.521
65.0
2.314
61.7
isc RF Product Specification
2SC5064
S12
MAG.
ANG.
0.034
64.3
0.052
61.9
0.067
63.9
0.083
65.2
0.100
66.4
0.117
66.7
0.135
65.4
0.149
64.0
0.163
63.4
0.179
61.3
S22
MAG.
ANG.
0.714
-27.5
0.534
-30.8
0.462
-30.1
0.428
-29.2
0.412
-28.6
0.403
-28.3
0.398
-28.8
0.393
-29.4
0.392
-29.0
0.395
-28.6
isc website：www.iscsemi.cn
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2SC5064.PDF ] | |
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