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Taiwan Semiconductor - Silicon Rectifiers

Numéro de référence 1N4004S
Description Silicon Rectifiers
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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1N4004S fiche technique
CREAT BY ART
1A, 50V - 1000V Silicon Rectifiers
1N4001S - 1N4007S
Taiwan Semiconductor
FEATURES
- High efficiency, low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case: A-405
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight: 0.2g (approximately)
A-405
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
1N 1N 1N 1N 1N 1N 1N
SYMBOL
4001S 4002S 4003S 4004S 4005S 4006S 4007S
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
VRRM
VRMS
VDC
IF(AV)
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
UNIT
V
V
V
A
A
Maximum instantaneous forward voltage (Note 1)
@1A
VF
1.0 V
Maximum reverse current @ rated VR
Typical junction capacitance (Note 2)
TJ=25°C
TJ=125°C
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300 μs, 1% duty cycle
IR
CJ
RθJA
TJ
TSTG
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
5
50
15
50
- 55 to +150
- 55 to +150
μA
pF
°C/W
°C
°C
Document Number: DS_D1402005
Version: F15

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