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2SC3561 fiches techniques PDF

Inchange Semiconductor - N-Channel MOSFET Transistor

Numéro de référence 2SC3561
Description N-Channel MOSFET Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC3561 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3561
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 450V (Min)
·High Switching Speed
APPLICATIONS
·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500 V
VCEO
Collector-Emitter Voltage
450 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous 2 A
ICM Collector Current-Peak
4A
IB Base Current-Continuous
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ Junction Temperature
Tstg Storage Temperature Range
0.5 A
20
W
2
150
-55~150
isc Websitewww.iscsemi.cn

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