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2SC4226 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Transistor

Numéro de référence 2SC4226
Description Silicon NPN Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC4226 fiche technique
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
RF Product Specification
2SC4226
DESCRIPTION
·Low Noise
NF = 1.2 dB TYP., @VCE = 3 V, IC = 7 mA, f = 1.0 GHz
·High Gain
S21e2 = 9.0 dB TYP. @VCE = 3 V, IC = 7 mA, f = 1.0 GHz
APPLICATIONS
·Designed for VHF, UHF low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
20 V
12 V
3.0 V
0.1 A
0.15 W
150
Tstg Storage Temperature Range
-65~150
isc websitewww.iscsemi.cn
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