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2SC2759 fiches techniques PDF

Inchange Semiconductor - Silicon NPN RF Transistor

Numéro de référence 2SC2759
Description Silicon NPN RF Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC2759 fiche technique
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC2759
DESCRIPTION
·Low Noise
·High Conversion Gain
Gcb= 12.5dB TYP. @IE= -5mA, VCB= 10V
APPLICATIONS
·Designed for use in VHF RF amplifier, local oscillator,mixer.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
30 V
14 V
3V
50 mA
0.15 W
125
-55~125
isc websitewww.iscsemi.cn
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