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Numéro de référence | 2SC2759 | ||
Description | Silicon NPN RF Transistor | ||
Fabricant | Inchange Semiconductor | ||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC2759
DESCRIPTION
·Low Noise
·High Conversion Gain
Gcb= 12.5dB TYP. @IE= -5mA, VCB= 10V
APPLICATIONS
·Designed for use in VHF RF amplifier, local oscillator,mixer.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
30 V
14 V
3V
50 mA
0.15 W
125 ℃
-55~125
℃
isc website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ 2SC2759 ] |
No | Description détaillée | Fabricant |
2SC2750 | High Speed High Current Switching Industrial Use | ETC |
2SC2750 | Silicon NPN Power Transistor | INCHANGE |
2SC2751 | Silicon NPN Power Transistors | Savant |
2SC2752 | NPN SILICON POWER TRANSISTOR | NEC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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