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Numéro de référence | 2N6770 | ||
Description | N-Channel MOSFET Transistor | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N6770
DESCRIPTION
·VGS Rated at ±20V
·Silicon Gate for fast switching speeds
·IDSS 、RDS(ON) ,specified at elevated temperature
·Low drive requirements
APPLICATIONS
designed for high voltage ,high speed application ,such as
off-line switching power applies,UPS,AC and DC motor controls ,
relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
500 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37℃ 12 A
Total Dissipation@TC=25℃
150 W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.83 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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Pages | Pages 2 | ||
Télécharger | [ 2N6770 ] |
No | Description détaillée | Fabricant |
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