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Inchange Semiconductor - N-Channel MOSFET Transistor

Numéro de référence 2N6758
Description N-Channel MOSFET Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2N6758 fiche technique
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N6758
DESCRIPTION
·VGS Rated at ±20V
·Silicon Gate for fast switching speeds
·IDSS RDS(ON) ,specified at elevated temperature
·Low drive reqirements
APPLICATIONS
designed for high power ,high speed application ,such as
switching applies,UPS,AC and DC motor controls ,
relay and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
200 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=379 A
Total Dissipation@TC=25
75 W
Max. Operating Junction Temperature -55~150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.67 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

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