|
|
Número de pieza | MBNP2026G6 | |
Descripción | N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device | |
Fabricantes | CYStech Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MBNP2026G6 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C197G6
Issued Date : 2011.01.20
Revised Date :
Page No. : 1/10
N- Channel Enhancement mode MOSFET AND PNP BJT Complex Device
MBNP2026G6
Description
The MBNP2026G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single
TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free package
Equivalent Circuit
MBNP2026G6
Outline
TSOP-6
C2
S1
D1
G:Gate B : Base
S:Source E : Emitter
D:Drain C : Collector
B2
E2
G1
MBNP2026G6
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C197G6
Issued Date : 2011.01.20
Revised Date :
Page No. : 5/10
N-channel MOSFET Characteristic Curves(Cont.)
Static Drain-Source On-State Resistance vs Drain Current
Static Drain-Source On-State Resistance vs Drain Current
100 10
VGS=2.5V
VGS=4V
Ta=25°C
Ta=25°C
Ta=75°C
10
Ta=125°C
Ta=75°C
Ta=125°C
1
1 10 100 1000
Drain Current---ID(mA)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
10
9
ID=50mA
8
7
6
5 TA=75°C
4 TA=125°C
3
2
TA=25°C
1
0
0 2 4 6 8 10
Gate-Source Voltage---VGS(V)
Reverse Drain Current vs Source-Drain Voltage(I)
1000
1
1 10 100 1000
Drain Current---ID(mA)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
10
9
8 ID=100mA
7
6
5 TA=75°C
4
TA=125°C
3
2
TA=25°C
1
0
0 2 4 6 8 10
Gate-Source Voltage---VGS(V)
Reverse Drain Current vs Source-Drain Voltage(II)
1000
100
TA=125°C
10
1
TA=25°C
TA=75°C
100
VGS=4V
10
1
VGS=0V
0.1
0
0.5 1
Source-Drain Voltage-VSD(V)
0.1
1.5 0
0.5 1
Source-Drain Voltage-VSD(V)
1.5
MBNP2026G6
CYStek Product Specification
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet MBNP2026G6.PDF ] |
Número de pieza | Descripción | Fabricantes |
MBNP2026G6 | N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device | CYStech Electronics |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |