(PDF) 2SA1440 Datasheet - Silicon PNP Power Transistor

Número de pieza	2SA1440
Descripción	Silicon PNP Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1440 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -0.5A) ·Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -2A, IB= -0.1A) APPLICATIONS ·This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -3 A ICM Collector Current-Pulse -6 A IB Base Current-Continuous -1.5 A Total Power Dissipation @TC=25℃ 15 PT Total Power Dissipation @Ta=25℃ 2.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark 1 page

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PDF 2SA1440 Data sheet ( Hoja de datos )