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2SA1263 fiches techniques PDF

Inchange Semiconductor - Silicon PNP Power Transistor

Numéro de référence 2SA1263
Description Silicon PNP Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SA1263 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1263
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Min) @IC= -5A
·Good Linearity of hFE
·Complement to Type 2SC3180
APPLICATIONS
·Power amplifier applications
·Recommend for 40W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-80 V
VCEO
Collector-Emitter Voltage
-80 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-6 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-0.6 A
60 W
150
-55~150
isc Websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark

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