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2SA1001 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Inchange Semiconductor - Silicon PNP Power Transistor

شماره قطعه 2SA1001
شرح مفصل Silicon PNP Power Transistor
تولید کننده Inchange Semiconductor 
آرم Inchange Semiconductor 


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2SA1001 شرح
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1001
DESCRIPTION
·High Current Capability
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.)
APPLICATIONS
·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-130
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25
Tj Junction Temperature
Tstg Storage Temperature
-130
V
-6 V
-8 A
80 W
150
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark

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