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2N5551 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Inchange Semiconductor - Silicon NPN Power Transistor

شماره قطعه 2N5551
شرح مفصل Silicon NPN Power Transistor
تولید کننده Inchange Semiconductor 
آرم Inchange Semiconductor 


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2N5551 شرح
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·NPN high-voltage transistor
·Low current (max. 300 mA)
·High voltage (max. 160 V)
·Complements to 2N5401.
isc Product Specification
2N5551
APPLICATIONS
·Designed for Switching and amplification
in high voltage applications , such as telephony
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
180 V
VCEO
Collector-Emitter Voltage
160 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
0.3 A
ICM Collector Current-Peak
0.6 A
IBM Base Current-Peak
PC
Collector Power Dissipation
@ Ta<50
0.1 A
0.63 W
J Junction Temperature
Tstg Storage Temperature Range
150
-65~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark

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