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2N5497 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Inchange Semiconductor - Silicon NPN Power Transistor

شماره قطعه 2N5497
شرح مفصل Silicon NPN Power Transistor
تولید کننده Inchange Semiconductor 
آرم Inchange Semiconductor 


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2N5497 شرح
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N5497
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 70V(Min)
·Low Saturation Voltage-
: VCE (sat)= 1V(Max)@IC= 3.5A
APPLICATIONS
·Designed for a wide variety of medium-power switching and
amplifier applications , such as series and shunt regulators
and driver and output stages of high-fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VCBO
VCEV
VCER
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
VBE= -1.5V
Collector-Emitter Voltage
RBE= 100Ω
Collector-Emitter Voltage
90
90
80
70
VEBO
Emitter-Base Voltage
5
IC Collector Current-Continuous
7
IB Base Current
Collector Power Dissipation
PC
@ Ta=25
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
3
1.8
50
150
Tstg Storage Temperature Range
-65~150
UNIT
V
V
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.5 /W
70 /W
isc websitewww.iscsemi.cn
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