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2N3866 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Inchange Semiconductor - Silicon NPN Power Transistor

شماره قطعه 2N3866
شرح مفصل Silicon NPN Power Transistor
تولید کننده Inchange Semiconductor 
آرم Inchange Semiconductor 


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2N3866 شرح
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN Planar Epitaxial Overlay Transistor
2N3866
DESCRIPTION
·This type is primarily intended for class-A, B or C amplifiers,
Frequency multiplier and oscillator circuits.
·High Gain Bandwidth Product
fT= 500 MHz (Min.)
·Low Collector Capacitance;
CC = 3 pF Max.
APPLICATIONS
·Designed for use in output, driver or pre-driver stages in
VHF and UHF equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
55 V
VCER
Collector-Emitter Voltage RBE= 10Ω
55
V
VCEO Collector-Emitter Voltage
30 V
VEBO
Emitter-Base Voltage
3.5 V
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
0.4 A
3.5 W
200
Tstg Storage Temperature Range
-65~+200
isc websitewww.iscsemi.cn
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