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2N3053 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Inchange Semiconductor - Silicon NPN Power Transistor

شماره قطعه 2N3053
شرح مفصل Silicon NPN Power Transistor
تولید کننده Inchange Semiconductor 
آرم Inchange Semiconductor 


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2N3053 شرح
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3053
DESCRIPTION
·Maximun SOA Curve
·High gain-bandwidth Product
: fT = 100MHz
·Low Leakage Current
APPLICATIONS
·Designed for audio amplifiers ,controlled amplifiers ,ower supplies, power oscillators and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60 V
VCEO
VCER
Collector-Emitter Voltage
Collector – Emitter Sustaining Voltage
40
50
V
V
VCEX
Collector - Emiiter Voltage
60 V
VEBO
IC
Emitter-Base Voltage
Collector Current-Continuous
5V
0.7 A
Collector Power Dissipation@TA=25
1
PC
Collector Power Dissipation@TC=25
5
TJ Junction Temperature
200
W
W
Tstg Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-c
Thermal Resistance,Junction to Ambient
Thermal Resistance,Junction to Case
MAX
175
35
UNIT
/W
/W
isc websitewww.iscsemi.cn
isc & iscsemi is registered trademark
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