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Numéro de référence | 2N3053 | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3053
DESCRIPTION
·Maximun SOA Curve
·High gain-bandwidth Product
: fT = 100MHz
·Low Leakage Current
APPLICATIONS
·Designed for audio amplifiers ,controlled amplifiers ,ower supplies, power oscillators and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60 V
VCEO
VCER
Collector-Emitter Voltage
Collector – Emitter Sustaining Voltage
40
50
V
V
VCEX
Collector - Emiiter Voltage
60 V
VEBO
IC
Emitter-Base Voltage
Collector Current-Continuous
5V
0.7 A
Collector Power Dissipation@TA=25℃
1
PC
Collector Power Dissipation@TC=25℃
5
TJ Junction Temperature
200
W
W
℃
Tstg Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-c
Thermal Resistance,Junction to Ambient
Thermal Resistance,Junction to Case
MAX
175
35
UNIT
℃/W
℃/W
isc website:www.iscsemi.cn
isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ 2N3053 ] |
No | Description détaillée | Fabricant |
2N3053 | MEDIUM POWER SILICON NPN PLANAR TRANSISTOR | Seme LAB |
2N3053 | GENERAL PURPOSE TRANSISTOR(NPN SILICON) | Boca Semiconductor Corporation |
2N3053 | COMPLEMENTARY SILICON TRANSISTORS | Micro Electronics |
2N3053 | GENERAL PURPOSE MEDIUM POWER SILICON NPN PLANAR TRASISTORS | ETC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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