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2N2955HV Datasheet دیتاشیت PDF دانلود

دیتاشیت - Inchange Semiconductor - Silicon PNP Power Transistor

شماره قطعه 2N2955HV
شرح مفصل Silicon PNP Power Transistor
تولید کننده Inchange Semiconductor 
آرم Inchange Semiconductor 


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2N2955HV شرح
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2N2955HV
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-
: hFE=20-70@IC= -4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.1V(Max)@ IC= -4A
·Complement to Type 2N3055HV
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100 V
VCER
VCEO
Collector-Emitter Voltage
Collector-Emitter Voltage
-100
-100
V
V
VEBO
Emitter-Base Voltage
-7 V
IC Collector Current-Continuous
IB Base Current
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature
-15
-7
115
200
-65~200
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX UNIT
1.52 /W
isc websitewww.iscsemi.cn
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