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2N1470 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Inchange Semiconductor - Silicon NPN Power Transistor

شماره قطعه 2N1470
شرح مفصل Silicon NPN Power Transistor
تولید کننده Inchange Semiconductor 
آرم Inchange Semiconductor 


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2N1470 شرح
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N1470
DESCRIPTION
·Excellent Safe Operating Area
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC = 1.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min)
APPLICATIONS
·Designed for general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
60 V
60 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
3
PC
Collector Power Dissipation@TC=25
55
A
W
TJ Junction Temperature
200
Tstg Storage Temperature
-65~200
isc websitewww.iscsemi.cn
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