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What is EMF25P02VA?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "P-Channel Logic Level Enhancement Mode Field Effect Transistor".


EMF25P02VA Datasheet PDF - Excelliance MOS

Part Number EMF25P02VA
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Manufacturers Excelliance MOS　
Logo Excelliance MOS Logo　


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Total 5 Pages



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No Preview Available ! EMF25P02VA datasheet, circuit

 
 
P‐Channel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
‐20V 
D
RDSON (MAX.) 
25mΩ 
ID 
‐7.8A 
G
 
 S
Pb‐Free Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
Bottom View
S DD
SD
GD D
PIN 1
SYMBOL 
EMF25P02VA
LIMITS 
UNIT 
Gate‐Source Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 70 °C 
Power Dissipation 
TA = 25 °C 
TA = 70 °C 
Operating Junction & Storage Temperature Range 
 
 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
PD 
Tj, Tstg 
TYPICAL 
±8 
‐7.8 
‐5.8 
‐31.2 
2.08 
1.33 
‐55 to 150 
V 
A 
W 
°C 
MAXIMUM 
UNIT 
Junction‐to‐Case 
RJC 
Junction‐to‐Ambient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1％ 
360°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
 
 
 
 
12 
°C / W 
60 
2013/11/13 
p.1 

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EMF25P02VA equivalent
 
 
  EMF25P02VA
 
 
Gate Threshold Voltage v.s. Junction Temperature
1.5
 
1.25
 
1.0
 
  0.75
600
500
400
300
Sin gle  P u lse  M a xim u m  P o w e r D issip a tio n
Sin g le  P u lse
Rθ  J A =  6 0 ° C / W
T A    =   2 5 ° C
  0.50
200
  0.25
 
0
  ‐50
0 50
100 150
TJ   ‐ Junction Temperature (°C)
 
Maximum Safe Operating Area
  100
100
0
0 .00 00 1 0.0 00 1
0.0 01
0 .01
t  1 , T im e  (  s e c  )
0 .1
1
   10 R D S  (O  N  ) Limit
10μs
100μs
1ms
10ms
 1
 
100ms
1s
DC
  0.1
  VG  S = ‐4.5V
Single Pulse
R  J  A = 60°C/W
    T A  = 25°C
 
0.01
0.1 1 10 100
  ‐VD  S  ‐ Drain‐Source Voltage( V )
 
1
 
Duty Cycle = 0.5
Transient Thermal Response Curve
 
0.2
 
0.1
0.1
  0.05
Notes:
  0.02
0.01
  0.01
 
Single Pulse
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.Rθ  J A  = 60°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
  4.Rθ  J A (t)=r(t) * RθJA
0.001
  10 ‐5
10‐4
10‐3
10 ‐2
10‐1
1
10 100
t 1 ,Time (sec)
 
 
 
 
2013/11/13 
p.5 


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Featured Datasheets

Part NumberDescriptionMFRS
EMF25P02VAThe function is P-Channel Logic Level Enhancement Mode Field Effect Transistor. Excelliance MOSExcelliance MOS
EMF25P02VATThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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