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Número de pieza | HY3210P | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | HOOYI | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HY3210P (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! HY3210P/M/B/PS/PM
Features
• 100V/120A
RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V
• 100% avalanche tested
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
N-Channel Enhancement Mode MOSFET
Pin Description
DS
G
TO-220FB-3L
DS
G
TO-220FB-3M
DS
G
TO-263-2L
Applications
• Switching application
• Power Management for Inverter Systems.
DS
G
TO-3PS-3L
D
DS
G
TO-3PS-3M
G N-Channel MOSFET
Ordering and Marking Information
S
P
HY3210
YYÿ XXXJWW G
PS
HY3210
YYÿ XXXJWW G
M
HY3210
YYÿ XXXJWW G
PM
HY3210
YYÿ XXXJWW G
B
HY3210
YYÿ XXXJWW G
Package Code
P : TO-220FB-3L
B: TO-263-2L
PM: TO-3PS-3M
M : TO-220FB-3M
PS: TO-3PS-3L
Date Code
YYXXX WW
Assembly Material
G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.hooyi.cc
141225
1 page HY3210P/M/B/PS/PM
Typical Operating Characteristics (Cont.)
Output Characteristics
160
140
V = 6,7,8,9,10V
GS
120 5.5V
100
80 5V
60 4.5V
40
20
0
01 2 3 4 5 6
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
9.5
8.5
VGS =10V
7.5
6.5
5.5
4.5
0
30 60 90
120 150
ID - Drain Current (A)
Drain-Source On Resistance
16
I =60A
DS
14
12
10
8
6
4
4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
I
DS
=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
5 www.hooyi.cc
5 Page HY3210P/M/B/PS/PM
TO-3PS-3L
SYMBOL
A
A1
A2
b
b2
c
D
D1
D2
DEP
E
E1
E2
E3
e
e1
L
L1
P
P1
P2
P3
Q
Q1
Q2
U
θ1
θ2
θ3
MIN
3.36
1.27
1.49
0.77
1.17
0.48
15.50
9.10
0.05
9.88
7.80
6.90
9.90
13.25
-
1.40
3.93
1.60
6.80
4.00
3°
5°
1°
NOM
MAX
3.56
3.76
1.30
1.37
1.54
1.64
0.80
0. 90
1.27
1.36
0.50
0.56
15.70 15.90
9.20
9.30
0.30 REF
0.10
0.20
10.00 10.20
8.00
8.20
7.10
7.30
10.00 10.10
2.54 BSC
5.08 BSC
13.40 13.55
3.00 3.30
6.00 REF
3.20 REF
3.57 REF
1.50
1.60
4.00
4.07
1.70
1.80
7.00
7.20
4.20
4.40
5°
7°
7°
9°
3°
5°
11 www.hooyi.cc
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet HY3210P.PDF ] |
Número de pieza | Descripción | Fabricantes |
HY3210B | N-Channel Enhancement Mode MOSFET | HOOYI |
HY3210M | N-Channel Enhancement Mode MOSFET | HOOYI |
HY3210P | N-Channel Enhancement Mode MOSFET | HOOYI |
HY3210PM | N-Channel Enhancement Mode MOSFET | HOOYI |
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