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PDF KTB778 Data sheet ( Hoja de datos )
| Número de pieza | KTB778 | |
| Descripción | TRIPLE DIFFUSED PNP TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Complementary to KTD998.
Recommended for 45 50W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
RATING
-120
-120
-5
-10
-15
-1
80
150
-55 150
UNIT
V
V
V
A
A
W
KTB778
TRIPLE DIFFUSED PNP TRANSISTOR
DIM MILLIMETERS
A
U
C
R
WW
A
B
C
D
16.30 MAX
12.00+_ 0.30
5.50+_ 0.20
1.20 MAX
E 8.00
V F 5.00
G 17.00+_ 0.30
H 0.60+0.15/-0.10
I 2.50
M
K
N
I
J 20.0+_ 0.1
K 4.00
D L 2.00
M 2.20 MAX
N 3.05 MAX
HO
5.45
OO
P 3.50
Q 1.00
R 3.00+_ 0.20
123
S 37.0
T 42.0
U Φ3.40+0.15/-0.10
V 10
1. BASE
W8
2. COLLECTOR
3. EMITTER
TO-3P(H)IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
V(BR)CEO
hFE (Note)
VCE(sat)
VBE
fT
Collector Output Capacitance
Cob
Note : hFE Classification R:55 110, O:80 160
TEST CONDITION
VCB=-120V, IE=0
VEB=-5V, IC=0
IC=-50mA, IB=0
VCE=-5V, IC=-1A
IC=-5A, IB=-0.5A
VCE=-5V, IC=-5A
VCE=-5V, IC=-1A
VCB=-10V, IE=0, f=1MHz
MIN.
-
-
-120
55
-
-
-
-
TYP.
-
-
-
-
-
-
10
280
MAX.
-10
-10
-
160
-2.5
-1.5
-
-
UNIT
A
A
V
V
V
MHz
pF
2009. 10. 7
Revision No : 2
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet KTB778.PDF ] | |
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