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PDF KTB772 Data sheet ( Hoja de datos )
| Número de pieza | KTB772 | |
| Descripción | EPITAXIAL PLANAR PNP TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
FEATURES
Complementary to KTD882.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
Emitter-Base Voltage
VEBO
Collector Current
DC
Pulse (Note)
IC
ICP
Base Current (DC)
IB
Collector Power
Dissipation
Ta=25
Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
Note : Pulse Width 10mS, Duty Cycle 50%.
RATING
-40
-30
-5
-3
-7
-0.6
1.5
10
150
-55 150
UNIT
V
V
V
A
A
W
KTB772
EPITAXIAL PLANAR PNP TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
O
NP
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.50+_ 0.5
2.3 +_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter-Cut-off Current
DC Current Gain
*
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage
*
Current Gain Bandwidth Product
ICBO
IEBO
hFE(1)
hFE(2) (Note)
VCE(sat)
VBE(sat)
fT
VCB=-30V, IE=0
VEB=-3V, IC=0
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
IC=-2A, IB=-0.2A
IC=-2V, IB=-0.2A
VCE=-5V, IC=-0.1A
Collector Output Capacitance
Cob VCB=-10V, IE=0, f=1MHz
* Pulse Test : Pulse Width 350 S, Duty Cycle 2% Pulsed
Note: hFE(2) Classification O:100 200 , Y:160 320 , GR:200 400
MIN.
-
-
30
100
-
-
-
-
TYP.
-
-
220
160
-0.3
-1.0
80
55
MAX.
-1
-1
-
400
-0.5
-2.0
-
-
UNIT
A
A
V
V
MHz
pF
2003. 7. 24
Revision No : 4
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KTB772.PDF ] | |
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