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PDF KTB1370 Data sheet ( Hoja de datos )
| Número de pieza | KTB1370 | |
| Descripción | TRIPLE DIFFUSED PNP TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KTB1370
TRIPLE DIFFUSED PNP TRANSISTOR
HIGH CURRENT SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATIONS.
FEATURES
High Collector Current : IC=-7A.
Low Collector-Emitter Saturation Voltage.
: VCE(sat)=-0.5V(Max.) at IC=-4A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Storage Temperature Range
Tstg
RATING
-100
-80
-5
-7
-1
30
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
LL
M
DD
NN
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2
F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5
R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR)CEO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
VCB=-100V, IE=0
VEB=-5V, IC=0
IC=-50mA, IB=0
VCE=-1V, IC=-1A
VCE=-1V, IC=-4A
IC=-4A, IB=-0.4A
IC=-4A, IB=-0.4A
VCE=-4V, IC=-1A
VCB=-10V, IE=0, f=1MHz
Switching
Time
Turn-On Time
ton
IB2
IB2
OUTPUT
Storage Time
tstg -IB1
10Ω
IB1
20µs
Fall Time
tf
-IB1=IB2=0.3A
DUTY CYCLE <= 1%
VCC =-30V
Note : hFE(1) Classification O:70 140 , Y:120 240
MIN.
-
-
-80
70
30
-
-
-
-
TYP.
-
-
-
-
-
-0.3
-0.9
10
250
MAX.
-5
-5
-
240
-
-0.5
-1.4
-
-
UNIT
A
A
V
V
V
MHz
pF
- 0.4 -
- 2.5 -
S
- 0.5 -
2007. 5. 21
Revision No : 2
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KTB1370.PDF ] | |
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