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PDF K2613 Data sheet ( Hoja de datos )
| Número de pieza | K2613 | |
| Descripción | MOSFET ( Transistor ) - 2SK2613 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SK2613
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII)
2SK2613
Switching Regulator Applications, DC-DC Converter and
Motor Drive Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.)
· High forward transfer admittance: ïYfsï = 6.0 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 800 V)
· Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
1000
1000
±30
8
24
150
910
8
15
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURSE
JEDEC
―
JEITA
―
TOSHIBA
2−16C1B
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
0.833
50
°C/W
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = 26.3 mH, RG = 25 W, IAR = 8 A
Note 3: Repetitive rating: Pulse width limited by max junction temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-08-09
1 page  
2SK2613
rth - tw
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
0.001
10 m
100 m
PDM
t
T
Duty = t/T
Rth (ch-c) = 0.833°C/W
1m
10 m
100 m
1
10
Pulse width tw (S)
Safe operating area
100
50
30 ID max (pulsed) *
10 ID max (continuous)
5
3 DC Operation
Tc = 25°C
1
0.5
0.3
100 ms *
1 ms *
0.1
0.05
*
Single nonrepetitive pulse
Tc = 25°C
0.03 Curves must be derated linearly
0.01 with increase in temperature.
1 3 10 30 100
300
VDSS max
1000 3000 10000
Drain-source voltage VDS (V)
EAS – Tch
1000
800
600
400
200
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
-15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 W
VDD = 90 V, L = 26.3 mH
Wave form
ΕAS
=
1
2
×L
×I2
×
ççèæ
BVDSS
BVDSS - VDD
÷÷øö
5 2002-08-09
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K2613.PDF ] | |
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