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PDF KTB1151 Data sheet ( Hoja de datos )
| Número de pieza | KTB1151 | |
| Descripción | EPITAXIAL PLANAR PNP TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
LOW COLLECTOR SATURATION VOLTAGE
LARGE CURRENT
FEATURES
High Power Dissipation : PC=1.5W(Ta=25
Complementary to KTD1691.
)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse *
Base Current
VCBO
VCEO
VEBO
IC
ICP
IB
Collector Power
Dissipation
Ta=25
Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
* PW 10ms, Duty Cycle 50%
RATING
-60
-60
-7
-5
-8
-1
1.5
20
150
-55 150
UNIT
V
V
V
A
A
W
KTB1151
EPITAXIAL PLANAR PNP TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
N
O
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.50+_ 0.5
2.3 +_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
*
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
ICBO
IEBO
hFE 1
hFE2 (Note)
hFE 3
VCE(sat)
VBE(sat)
TEST CONDITION
VCB=-50V, IE=0
VEB=-7V, IC=0
VCE=-1V, IC=-0.1A
VCE=-1V, IC=-2A
VCE=-2V, IC=-5A
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
Turn On Time
ton
Switching
Time
Storage Time
tstg
Fall Time
tf
* Pulse test : PW 350 S, Duty Cycle 2% Pulse
Note) hFE(2) Classification : O:160 320, Y:200
0
I B2
INPUT
IB1
20µsec
-IB1=IB2=0.2A
DUTY CYCLE <= 1%
400.
IB1
IB2
OUTPUT
VCC =-10V
MIN.
-
-
60
160
50
-
-
-
TYP.
-
-
-
-
-
-0.14
-0.9
MAX.
-10
-10
-
400
-
-0.3
-1.2
UNIT
A
A
V
V
0.15 1
- 0.78 2.5
S
- 0.18 1
2003. 7. 24
Revision No : 2
1/3
1 page | ||
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