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PDF 2N5551SC Data sheet ( Hoja de datos )
| Número de pieza | 2N5551SC | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES
High Collector Breakdwon Voltage
: VCBO=180V, VCEO=160V
Low Leakage Current.
: ICBO=50nA(Max.) VCB=120V
Low Saturation Voltage
: VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
180
Collector-Emitter Voltage
VCEO
160
Emitter-Base Voltage
VEBO
6
Collector Current
IC 600
Base Current
IB 100
Collector Power Dissipation
PC * 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )
UNIT
V
V
V
mA
mA
mW
2N5551SC
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
23
1
M
DIM MILLIMETERS
A 2.90+_ 0.1
B 1.30+0.20/-0.15
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
G 1.90
J 0.10
K 0.00 ~ 0.10
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23(1)
Marking
ZFCType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
ICBO
IEBO
Collector-Base Breakdown Voltage
Collector-Emitter
Breakdown Voltage
*
V(BR)CBO
V(BR)CEO
Emitter-Base Breakdown Voltage
V(BR)EBO
DC Current Gain
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
* hFE
*
VCE(sat)
*
VBE(sat)
Transition Frequency
fT
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
TEST CONDITION
VCB=120V, IE=0
VEB=4V, IC=0
IC=0.1mA, IE=0
IC=1mA, IB=0
IE=0.1mA, IC=0
VCE=5V, IC=10mA
IC=50mA, IB=5mA
IC=50mA, IB=5mA
VCE=5V, IC=10mA, f=30MHz
2015. 5. 12
Revision No : 0
MIN.
-
-
180
TYP.
-
-
-
MAX.
50
50
-
UNIT
nA
nA
V
160 - - V
5- -V
150 - 250
- - 0.5 V
- - 1.0 V
100 - 300 MHz
1/1
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