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2N3906S fiches techniques PDF

KEC - EPITAXIAL PLANAR PNP TRANSISTOR

Numéro de référence 2N3906S
Description EPITAXIAL PLANAR PNP TRANSISTOR
Fabricant KEC 
Logo KEC 





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2N3906S fiche technique
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: ICEX=-50nA(Max.), IBL=-50nA(Max.)
@VCE=-30V, VEB=-3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.
Low Collector Output Capacitance
: Cob=4.5pF(Max.) @VCB=-5V.
Complementary to 2N3904S.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
-40
Collector-Emitter Voltage
VCEO
-40
Emitter-Base Voltage
VEBO
-5
Collector Current
IC -200
Base Current
IB -50
Collector Power Dissipation
PC * 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )
UNIT
V
V
V
mA
mA
mW
2N3906S
EPITAXIAL PLANAR PNP TRANSISTOR
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
ZAType Name
Lot No.
2005. 4. 21
Revision No : 3
1/4

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