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Numéro de référence | 2N5401C | ||
Description | EPITAXIAL PLANAR PNP TRANSISTOR | ||
Fabricant | KEC | ||
Logo | |||
1 Page
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES
High Collector Breakdwon Voltage
: VCBO=-160V, VCEO=-150V
Low Leakage Current.
: ICBO=-50nA(Max.) @VCB=-120V
Low Saturation Voltage
: VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA
Low Noise : NF=8dB (Max.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
(Ta=25 )
Collector Power Dissipation
(Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
PC
Tj
Tstg
RATING
-160
-150
-5
-600
-100
625
1.5
150
-55 150
UNIT
V
V
V
mA
mA
mW
W
2N5401C
EPITAXIAL PLANAR PNP TRANSISTOR
BC
KE
G
D
H
FF
1 23
N DIM MILLIMETERS
A 4.70 MAX
B 4.80 MAX
C 3.70 MAX
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
J 14.00 +_0.50
K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
1997. 5. 13
Revision No : 0
1/2
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Pages | Pages 2 | ||
Télécharger | [ 2N5401C ] |
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