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KPS11N60D fiches techniques PDF

KEC - N CHANNEL MOS FIELD EFFECT TRANSISTOR

Numéro de référence KPS11N60D
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Fabricant KEC 
Logo KEC 





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KPS11N60D fiche technique
SEMICONDUCTOR
TECHNICAL DATA
General Description
This Super Junction MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
VDSS=600V, ID=11A
Drain-Source ON Resistance :
RDS(ON)(Max)=0.38 @VGS=10V
Qg(typ.)= 23nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBO
L
RATING
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
600
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
11*
6.9*
24*
150
4.0
4.5
73.5
0.59
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
150
-55 150
Thermal Resistance, Junction-to-Case RthJC
Thermal Resistance,
Junction-to-Ambient
RthJA
* : Drain current limited by maximum junction temperature.
1.7
110
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
KPS11N60D
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
CD
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
123
O
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
PIN CONNECTION
D
G
2014 .11. 05
S
Revision No : 1
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